 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SFP50N06 Silicon N-Channel MOSFET Features RDS(on)(Max 22m)@VGS=10V Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances Compared with standard parts form various sources.All of these power MOSFETs are designed for applications in switching regulators , switching convertors, motor and relay drivers ,and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ,Tstg TL Junction and Storage Temperature Channel Temperature 1.3 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) (Note2) (Note1) (Note3) (Note1) 38 200 25 480 13 5.8 130 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 60 50 Units V A Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Case-to-Sink,Flat, Greased Surface Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.96 62.5 Units /W /W /W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. SFP50N06 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=20V,VDS=0V IG=10 A,VDS=0V VDS=60V,VGS=0V Min 20 60 2 - Type 20 22 1180 440 65 15 105 60 65 31 8 13 Max 100 1 250 4 22 1540 580 90 40 220 Unit nA V A A V V m S Drain cut -off current IDSS VDS=60V,Tc=125 Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg ID=250 A,VGS=0V VDS=10V,ID=250 A VGS=10V,ID=25A VDS=25V,ID=25A VDS=25V, VGS=0V, f=1MHz VDD=30V, ID=25A RG=25 VGS=10V VDD=48V, (Note4,5) pF ns 130 140 41 nC - - plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=50A (Note4,5) - Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=50A,VGS=0V IDR=50A,VGS=0V, dIDR / dt =100 A / s Min - Type 52 75 Max 50 200 1.5 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=0.5mH IAS=50A,VDD=25V,VGS=10V ,Starting TJ=25 3.ISD50A,di/dt380A/us,VDD Steady, all for your advance SFP50N06 Fig.1 Transfer characteristics Fig.2 On -state Characteristics Fig.3 Typical Capacitance vs Drain Current Fig.4 On -resistance Variation vs Drain current and gate Voltage Fig.5 On- resistance variation vs Junction Temperature Fig.6 Gate charge Characteristics 3/7 Steady, all for your advance SFP50N06 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, all for your advance SFP50N06 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance SFP50N06 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance SFP50N06 TO-220 Package Dimension Unit:mm 7/7 Steady, all for your advance |
Price & Availability of SFP50N06
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |